Atomic-layer deposited thulium oxide as a passivation layer on germanium

Passivation of GaAs surface by atomic-layer-deposited titanium nitride

The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide

Rights: © 2013 Wiley-Blackwell. This is the post print version of the following article: Repo, Päivikki & Benick, Jan & Gastrow, Guillaume von & Vähänissi, Ville & Heinz, Friedemann D. & Schön, Jonas & Schubert, Martin C. & Savin, Hele. 2013. Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide. Physica Status Solidi RRL. Volume 7, Issue 11. 950-954. DOI: 10.10...

Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

High performance single-walled carbon nanotube field effect transistors SWCNT-FETs fabricated with thin atomic layer deposited ALD Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10−11 A at −2.5 V Vg +7 V, a subthreshold swing of S 105 mV/decade, and a maximum on current of −12 A...

High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer J. J. Gu, Y. Q. Liu, M. Xu, G. K. Celler, R. G. Gordon, and P. D. Ye School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA Department of Chemistry and Chemical Biology, Harvard University, Cambridge,...